IRF7422D2

11/27/01

Description

SO-8

Notes:

Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)

Pulse width

≤ 300µs – duty cycle ≤ 2%

Surface mounted on FR-4 board, t

≤ 10sec.

8

1

2

3

4

5

6

7

D

D

D

D

G

S

A

A

A

Top View

A

Schottky Vf = 0.52V

FETKY

MOSFET & Schottky Diode

TM

Schottky diodes offer the designer an innovative

board space saving solution for switching regulator

and power management applications. Generation 5

HEXFETs utilize advanced processing techniques to

achieve extremely low on-resistance per silicon area.

Combinining this technology with International

Rectifier's low forward drop Schottky rectifiers results

in an extremely efficient device suitable for use in a

wide variety of portable electronics applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics. The

SO-8 package is designed for vapor phase, infrared or

wave soldering techniques.

Absolute Maximum Ratings

www.irf.com

1

Parameter

Maximum

Units

62.5

°C/W

Thermal Resistance Ratings

Parameter

Maximum

Units

-4.3

-3.4

Pulsed Drain Current ➀

-33

2.0

1.3

Linear Derating Factor

16

mW/°C

Gate-to-Source Voltage

± 12

V

dv/dt

Peak Diode Recovery dv/dt ➁

-5.0

V/ns

Junction and Storage Temperature Range

-55 to +150

°C

Co-packaged HEXFET

 Power

MOSFET and Schottky Diode

Ideal For Buck Regulator Applications

P-Channel HEXFET

Generation 5 Technology

SO-8 Footprint

Power Dissipation

A

W

PD- 91412L