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NSS1001CL Datasheet(PDF) 1 Page - ON Semiconductor |
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NSS1001CL Datasheet(HTML) 1 Page - ON Semiconductor |
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1 / 7 page ![]() DATA SHEET www.onsemi.com © Semiconductor Components Industries, LLC, 2021 February, 2022 − Rev. 0 1 Publication Order Number: NSS1001CL/D Bipolar Transistor -100 V, -2.5 A, Low VCE(sat) PNP Single LFPAK NSS1001CL This device is bipolar junction transistor featuring high current, low saturation voltage, and high speed switching. Suitable for automotive applications. AEC−Q101 qualified and PPAP capable. (NSVS1001CLTWG) Features • Complement to NSS1002CL • Large Current Capacitance • Low Collector to Emitter Saturation Voltage • Thin Profile LFPAK8 3.3 x 3.3 Package • High−Speed Switching • High Allowable Power Dissipation • AEC−Q101 Qualified and PPAP Capable (NSVS1001CLTWG) • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Load Switch • Gate Driver Buffer • DC−DC Converters Specifications ABSOLUTE MAXIMUM RATING at Ta = 25°C Parameter Symbol Value Unit Collector−to−Base Voltage VCBO −120 V Collector−to−Emitter Voltage VCEO −100 V Emitter−to−Base Voltage VEBO −7 V Collector Current IC −2.5 A Collector Current (Pulse) ICP −4 A Collector Dissipation PC (Note 1) 0.8 W PC (Note 2) 2.2 Junction Temperature TJ 175 °C Storage Temperature Range Tstg −55 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Mounted on FRB with minimum pad of Copper 2 oz 2. Mounted on FRB with 1 in/sq pad of Copper 2 oz MARKING DIAGRAM LFPAK8 3.3x3.3, 0.65P CASE 760AD ELECTRICAL CONNECTION NSS1001 = Specific Device Code A = Assembly Location WL = Wafer Lot Y = Year W = Work Week G = Pb−Free Package NSS 1001G AWLYW ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. |
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