LM399 datasheet(3/10 Pages) AD

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Data Sheet

ADR1000

SPECIFICATIONS

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Rev. B | 3 of 10

ELECTRICAL CHARACTERISTICS

TA = 25°C, unless otherwise noted.

Table 2.

Parameter

Symbol

Test Conditions/Comments

Min

Typ

Max

Unit

ZENER REFERENCE VOLTAGE (VBZ1 + VBEQ1)1

VREF

Zener current (IBZ1) = 5 mA, CQ1 current (ICQ1) = 100 µA

6.57

6.62

6.67

IBZ1 = 1 mA, ICQ1 = 100 µA

6.54

6.59

6.64

ZENER LEAKAGE CURRENT

Zener voltage (VZ) = 5 V

1.5

µA

ZENER REFERENCE NOISE (VZ + VBEQ1)

eN p-p

IBZ1 = 5 mA, ICQ1 = 100 µA, 0.1 Hz < f < 10 Hz

0.14

ppm p-p

0.9

µV p-p

IBZ1 = 5 mA, ICQ1 = 100 µA

f = 0.1 Hz

300

nV/√Hz

f = 10 Hz

nV/√Hz

f = 1 kHz

nV/√Hz

HEATER RESISTANCE

RHTR

Heater current (IHEATER) = 1 mA

230

242

255

Ω

BREAKDOWN VOLTAGE

Heater

BVHTR

IHEATER < 10 µA to Pin 4 (IZSET)

Transistor Q1

BVCEO

ICQ1 < 10 µA

Transistor Q2

BVCEO

CQ2 current (ICQ2) < 10 µA

CURRENT GAIN

hFE_Q1

ICQ1 = 100 µA, VCE = 600 mV

280

400

520

A/A

hFE_Q2

ICQ1 = 100 µA, VCE = 600 mV

190

300

410

A/A

TEMPERATURE COEFFICIENT

TCVREF

Using the circuit shown in Figure 9 with the

<0.2

ppm/°C

recommended layout

THERMAL HYSTERESIS

ΔVREF_TH

IBZ1 = 5 mA, ICQ1 = 100 µA, ΔTA = 100°C

ppm

6.62

µV

THERMAL RESISTANCE

θJA

Time = 5 minutes

216

°C/W

LONG-TERM DRIFT

ΔVREF_LTD

IBZ1 = 5 mA, ICQ1 = 100 µA, TA = 25°C,

chip set temperature (TSET) = 75°C

200 hours (early life drift)

8.9

ppm

1000 hours

7.7

ppm

2000 hours

6.6

ppm

3000 hours

6.2

ppm

1 year (after first 3000 hours)

0.5

ppm

1 VBZ1 is the buried Zener diode voltage, and VBEQ1 is the base emitter voltage of the temperature compensating transistor.

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