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GSIB640N Datasheet(PDF) 1 Page - Vishay Siliconix

Part # GSIB640N
Description  Single-Phase Single In-Line Bridge Rectifiers
PDF  4 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

GSIB640N Datasheet(HTML) 1 Page - Vishay Siliconix

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GSIB620N, GSIB640N, GSIB660N, GSIB680N
www.vishay.com
Vishay General Semiconductor
Revision: 09-Jul-2020
1
Document Number: 89385
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Single-Phase Single In-Line Bridge Rectifiers
LINKS TO ADDITIONAL RESOURCES
FEATURES
• UL recognition file number E54214
• Thin single in-Iine package
• Glass passivated chip junction
• High surge current capability
• High case dielectric strength of 1500 VRMS
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances, office
equipment, industrial automation applications.
MECHANICAL DATA
Case: GSIB-5S
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals:
matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: as marked on body
Mounting Torque: 10 cm-kg (8.8 in-lbs) maximum
Recommended Torque: 5.7 cm-kg (5 in-lbs)
Notes
(1) Unit case mounted on aluminum plate heatsink
(2) Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length
PRIMARY CHARACTERISTICS
IF(AV)
6.0 A
VRRM
200 V, 400 V, 600 V, 800 V
IFSM
180 A
IR
10 μA
VF
0.95 V
TJ max.
150 °C
Package
GSIB-5S
Circuit configuration
In-line
Case Style GSIB-5S
~
~
~
~
333
DDD3 D
3D Models
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
GSIB620N
GSIB640N
GSIB660N
GSIB680N
UNIT
Maximum repetitive peak reverse voltage
VRRM
200
400
600
800
V
Maximum RMS voltage
VRMS
140
280
420
560
V
Maximum DC blocking voltage
VDC
200
400
600
800
V
Maximum average forward rectified output
current at
TC = 100 °C
IF(AV) (1)
6.0
A
TA = 25 °C
IF(AV) (2)
2.8
Peak forward surge current single sine-wave
superimposed on rated load (JEDEC® method)
IFSM
180
A
Rating for fusing (t < 8.3 ms)
I2t
120
A2s
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
GSIB620N
GSIB640N
GSIB660N
GSIB680N
UNIT
Maximum instantaneous
forward voltage drop per diode
IF = 3.0 A
VF
0.95
V
Maximum DC reverse current at
rated DC blocking voltage per diode
TA = 25 °C
IR
10
μA
TA = 125 °C
250


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