| Electronic Components Datasheet Search |
|
GSIB640N Datasheet(PDF) 1 Page - Vishay Siliconix |
|
|
|||||||||||||||||||||||||||||
GSIB640N Datasheet(HTML) 1 Page - Vishay Siliconix |
|
1 / 4 page ![]() GSIB620N, GSIB640N, GSIB660N, GSIB680N www.vishay.com Vishay General Semiconductor Revision: 09-Jul-2020 1 Document Number: 89385 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Single-Phase Single In-Line Bridge Rectifiers LINKS TO ADDITIONAL RESOURCES FEATURES • UL recognition file number E54214 • Thin single in-Iine package • Glass passivated chip junction • High surge current capability • High case dielectric strength of 1500 VRMS • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for switching power supply, home appliances, office equipment, industrial automation applications. MECHANICAL DATA Case: GSIB-5S Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: as marked on body Mounting Torque: 10 cm-kg (8.8 in-lbs) maximum Recommended Torque: 5.7 cm-kg (5 in-lbs) Notes (1) Unit case mounted on aluminum plate heatsink (2) Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length PRIMARY CHARACTERISTICS IF(AV) 6.0 A VRRM 200 V, 400 V, 600 V, 800 V IFSM 180 A IR 10 μA VF 0.95 V TJ max. 150 °C Package GSIB-5S Circuit configuration In-line Case Style GSIB-5S ~ ~ ~ ~ 333 DDD3 D 3D Models MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL GSIB620N GSIB640N GSIB660N GSIB680N UNIT Maximum repetitive peak reverse voltage VRRM 200 400 600 800 V Maximum RMS voltage VRMS 140 280 420 560 V Maximum DC blocking voltage VDC 200 400 600 800 V Maximum average forward rectified output current at TC = 100 °C IF(AV) (1) 6.0 A TA = 25 °C IF(AV) (2) 2.8 Peak forward surge current single sine-wave superimposed on rated load (JEDEC® method) IFSM 180 A Rating for fusing (t < 8.3 ms) I2t 120 A2s Operating junction and storage temperature range TJ, TSTG -55 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL GSIB620N GSIB640N GSIB660N GSIB680N UNIT Maximum instantaneous forward voltage drop per diode IF = 3.0 A VF 0.95 V Maximum DC reverse current at rated DC blocking voltage per diode TA = 25 °C IR 10 μA TA = 125 °C 250 |
Similar Part No. - GSIB640N |
|
Similar Description - GSIB640N |
|
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |