GSIB620N, GSIB640N, GSIB660N, GSIB680N

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Vishay General Semiconductor

Revision: 09-Jul-2020

3

Document Number: 89385

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 5 - Typical Junction Capacitance Per Diode

Fig. 6 - Typical Transient Thermal Impedance Per Diode

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

0.1

1

10

100

10

100

1000

1

Reverse Voltage (V)

0.01

0.1

1

10

100

0.1

10

100

t - Heating Time (s)

1

2.5 ± 0.2

2.2 ± 0.2

1 ± 0.1

10 ± 0.2

7.5

± 0.2

2.7 ± 0.2

0.7 ± 0.1

4.6 ± 0.2

3.6 ± 0.2

+

7.5

± 0.2

30 ± 0.3

Case Style GSIB-5S