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AR1PD Datasheet(PDF) 1 Page - Vishay Siliconix |
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AR1PD Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 5 page ![]() AR1PD, AR1PG, AR1PJ, AR1PK, AR1PM www.vishay.com Vishay General Semiconductor Revision: 21-Feb-2020 1 Document Number: 89289 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Surface Mount Fast Avalanche Rectifiers ADDITIONAL RESOURCES FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Glass passivated pellet chip junction • Fast switching for high efficiency • Low reverse current • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in fast switching rectification of power supply, inverters, converters, and freewheeling diodes for consumer, automotive, and telecommunication. MECHANICAL DATA Case: SMP (DO-220AA) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and automotive grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix meets JESD 201 class 2 whisker test PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 200 V, 400 V, 600 V, 800 V, 1000 V IFSM 30 A, 25 A trr 140 ns, 120 ns VF 1.15 V, 1.4 V IR 1 μA EAS 20 mJ TJ max. 175 °C Package SMP (DO-220AA) Circuit configuration Single SMP (DO-220AA) eSMP ® Series Cathode Anode 333 DDD3 D 3D Models Available MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL AR1PD AR1PG AR1PJ AR1PK AR1PM UNIT Device marking code ARD ARG ARJ ARK ARM Maximum repetitive peak reverse voltage VRRM 200 400 600 800 1000 V Average forward current IF(AV) 1.0 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 30 25 A Non-repetitive avalanche energy at IAS = 1.0 A, TA = 25 °C EAS 20 mJ Operating junction and storage temperature range TJ, TSTG -55 to +175 °C |
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