Silicon Bipolar High fT Low Noise Microwave Transistors

MP42141 Series

Specification Subject to Change Without Notice

M-Pulse Microwave____________________________________________________________________________________

2

576 Charcot Avemue, San Jose, California 95131

Tel (408) 432-1480

Fax (408)) 432-3440

Absolute Maximum Ratings

MP42141 Series

Collector-Base Voltage

27 V

Collector-Emitter Voltage

20 V

Emitter-Base Voltage

1.5 V

Collector Current

50 mA

Junction Operating Temperature

200

°C

Storage Temperature

Chip or Ceramic Packages

-65

°C to +200°C

Plastic Packages

-65

°C to +125°C

Total Power Dissipation at 25

°C

509 Case Style

400 mW

510 Case Style

700 mW

35 Case Style

700 mW

Electrical Specifications @ 25

°C

MP42141 Series

Parameter of Test

Condition

Symbol

Units

MP4214100

Chip

MP4214135

Micro-X

MP42141-509

TO-72

Gain Bandwidth Product

GHz

4.1 typ

-----

-----

Fm =1.0 GHz

Ic = 15 mA

Insertion Power Gain

2

dB

f = 1 GHz

13 typ

13 typ

11 typ

f = 2 GHz

7 typ

7 min

5 typ

Noise Figure

NF

dB

f = 1 GHz

2.0 typ

2.0 typ

2.3 typ

f = 2 GHz

3.4 typ

3.4 typ

3.6 typ

Unilateral Gain

GTU (max)

dB

f = 1 GHz

17 typ

17 typ

14 typ

Power Out at 1 dB

dBm

Compression

Z=OPT

f = 1 GHz

N/A

+7 typ

+4 typ