SMP9517 datasheet(6/8 Pages) SUMMIT

6 / 8 page

SMP9517

SUMMIT MICROELECTRONICS, Inc.

2035 3.0 5/10/00

2017 PGM T5.1

DC ELECTRICAL CHARACTERISTICS VDD = 2.7V to 5.5V, VH = VDD, VL = 0V, Unless otherwise

specified

Notes:

1. IDD is the supply current drawn while the EEPROM is being updated. IDD does not include the current that flows through the Reference

resistor chain.

2. UP# and DWN# have internal pull-up resistors of approximately 50k

Ω. When the input is pulled to ground the resulting output current

will be VDD/50ký.

Limits

Symbol

Parameter

Min.

Typ.

Max.

Units

fGAP

Time Between Two Separate Push Button Events

µs

tDB

Debounce Time

tS SLOW

After Debounce to Wiper Change on a Slow Mode

100

250

375

tS FAST

Wiper Change on a Fast Mode

tPU

Power-Up to Wiper Stable

500

µs

tR VDD

VDD Power-Up Rate

0.2

mV/µs

tASTO

AUTOSTORE Cycle Time (Note 3)

VASTH

AUTOSTORE Threshold Voltage (Note 3)

4.6

5.5

tASEND

AUTOSTORE Cycle End Voltage

3.5

AC OPERATING CHARACTERISTICS VDD = 4.5V to 5.5V

2017 PGM T6.0

Symbol

Parameter

Conditions

Min

Max

Units

IDD

Supply Current

STR# =

1.2

during store (Note 1)

ISB

Supply Standby Current

200

µA

IIH

Input Leakage Current

VIN = VDD

µA

IIL

Input Leakage Current (Note 2)

VIN = 0V

-100

µA

VIH

High Level Input Voltage

VDD

VIL

Low Level Input Voltage

0.8

Notes:

3. tASTO and VASTH are characterized and periodically sampled, but not 100% tested.

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