BLF642 datasheet(5/12 Pages) AMPLEON

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BLF642#3

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Product data sheet

Rev. 3 — 1 September 2015

5 of 12

BLF642

Broadband power LDMOS transistor

8.1.2 2-Tone CW

8.1.3 Pulsed CW

VDS = 32 V; IDq = 200 mA; f = 1300 MHz;

carrier spacing = 100 kHz.

VDS = 32 V; f = 1300 MHz; carrier spacing = 100 kHz.

(1) IDq = 50 mA

(2) IDq = 100 mA

(3) IDq = 150 mA

(4) IDq = 200 mA

(5) IDq = 250 mA

(6) IDq = 300 mA

(7) IDq = 350 mA

Fig 3.

Power gain and drain efficiency as function of

average load power; typical values

Fig 4.

Third order intermodulation distortion as a

function of average load power; typical values

001aan777

PL(AV) (W)

030

(dB)

ηD

(%)

ηD

PL(AV) (W)

030

001aan778

-40

-20

IMD3

(dBc)

-60

(7)

(6)

(5)

(4)

(3)

(2)

(1)

VDS = 32 V; IDq = 200 mA; f = 1300 MHz

Fig 5.

Power gain and drain efficiency as a function of average power; typical values

PL (W)

050

001aao319

(dB)

ηD

(%)

ηD

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