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BLF642 Datasheet(PDF) 6 Page - Ampleon Netherlands B.V. |
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BLF642 Datasheet(HTML) 6 Page - Ampleon Netherlands B.V. |
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6 / 12 page ![]() BLF642#3 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 3 — 1 September 2015 6 of 12 BLF642 Broadband power LDMOS transistor 8.1.4 DVB-T 8.2 Test circuit VDS = 32 V; IDq = 200 mA; f = 1300 MHz. VDS = 32 V; IDq = 200 mA; f = 1300 MHz. Fig 6. Power gain and drain efficiency as function of average load power; typical values Fig 7. PAR and IMDshldr as function of average load power; typical values PL(AV) (W) 025 20 10 15 5 001aao321 18 19 20 Gp (dB) ηD (%) 17 20 40 60 0 ηD Gp PL(AV) (W) 025 20 10 15 5 001aao320 -40 -20 0 IMDshldr (dBc) PAR (dB) -60 4 8 12 0 IMDshldr PAR See Table 8 for a list of components. Fig 8. Component layout for class-AB amplifier 001aao322 + - + - C2 C3 C5 C6 C11 C18 C20 C13 C14 C15 C16 C17 C12 C19 C4 R1 C1 28.4 mm 40 mm 5.9 mm 6 mm 10.3 mm 24.4 mm 37.7 mm |
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