1. Product profile

1.1 General description

A 200 W LDMOS RF power transistor for broadcast transmitter and industrial

applications. The transistor is suitable for the frequency range HF to 1500 MHz. The

excellent ruggedness and broadband performance of this device makes it ideal for digital

applications.

1.2 Features and benefits



Integrated ESD protection



Excellent ruggedness



High power gain



High efficiency



Excellent reliability



Easy power control



Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications



Communication transmitter applications in the HF to 1500 MHz frequency range



Industrial applications in the HF to 1500 MHz frequency range

BLF647PS

Broadband power LDMOS transistor

Rev. 3 — 1 September 2015

Product data sheet

Table 1.

Application information

Test signal

f

IMD3

(MHz)

(V)

(A) (W)

(W)

(dB) (%) (dBc)

Pulsed, class-B

1300

32

0.1 -

200

17.5 70

-

CW, class-B

1300

32

0.1 200

-

17.5 70

-

2-tone, class-AB

32

0.7 75

-

19

48

33