BLF888AS datasheet(5/17 Pages) AMPLEON

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BLF888A_BLF888AS#6

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Product data sheet

Rev. 6 — 1 September 2015

5 of 17

BLF888A; BLF888AS

UHF power LDMOS transistor

6.1 Ruggedness in class-AB operation

The BLF888A and BLF888AS are capable of withstanding a load mismatch corresponding

to VSWR

 40 : 1 through all phases under the following conditions: VDS =50V;

f = 860 MHz at rated power.

7. Application information

7.1 Narrowband RF figures

7.1.1 2-Tone

VDS = 50 V; IDq = 1.3 A; measured in a common source

narrowband 860 MHz test circuit.

VDS = 50 V; IDq = 1.3 A; measured in a common source

narrowband 860 MHz test circuit.

Fig 2.

2-Tone power gain and drain efficiency as

function of load power; typical values

Fig 3.

2-Tone power gain and third order

intermodulation distortion as load power;

typical values

PL(AV) (W)

500

400

200

300

100

001aan761

(dB)

ηD

(%)

ηD

PL(AV) (W)

500

400

200

300

100

001aan762

(dB)

IMD3

(dBc)

-40

-20

-60

IMD3

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