BLF888E_BLF888ES

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© Ampleon Netherlands B.V. 2016. All rights reserved.

Product data sheet

Rev. 2 — 30 August 2016

2 of 13

BLF888E; BLF888ES

UHF power LDMOS transistor

2. Pinning information

[1]

Connected to flange.

3. Ordering information

4. Limiting values

[1]

Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF

calculator.

Table 2.

Pinning

Pin

Description

Simplified outline

Graphic symbol

BLF888E (SOT539A)

1

drain1 (peak)

2

drain2 (main)

3

gate1 (peak)

4

gate2 (main)

5source

[1]

BLF888ES (SOT539B)

1

drain1 (peak)

2

drain2 (main)

3

gate1 (peak)

4

gate2 (main)

5source

[1]

5

12

4

3

4

3

5

1

2

sym117

5

12

4

3

4

3

5

1

2

sym117

Table 3.

Ordering information

Type number Package

Name Description

Version

BLF888E

-

flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A

BLF888ES

-

earless flanged balanced ceramic package; 4 leads

SOT539B

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

main amplifier drain-source voltage

-

104

V

peak amplifier drain-source voltage

-

120

V

main amplifier gate-source voltage

0.5 +11

V

peak amplifier gate-source voltage

6+11

V

storage temperature

65

+150

C

junction temperature

[1] -225

C