MW4IC001NR4 MW4IC001MR4

1

RF Device Data

Freescale Semiconductor

RF LDMOS Wideband Integrated

Power Amplifiers

The MW4IC001 wideband integrated circuit is designed for use as a distortion

signature device in analog predistortion systems. It uses Freescale’s newest

High Voltage (26 to 28 Volts) LDMOS IC technology. Its wideband On Chip

design makes it usable from 800 MHz to 2170 MHz. The linearity performances

cover all modulations for cellular applications: GSM EDGE, TDMA, CDMA and

W-CDMA.

Output Power — 900 mW PEP

Power Gain — 13 dB

Efficiency — 38%

• High Gain, High Efficiency and High Linearity

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• N Suffix Indicates Lead-Free Terminations

• In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

- 0.5, +65

Vdc

Gate-Source Voltage

- 0.5, +15

Vdc

Derate above 25°C

4.58

0.037

W

W/°C

Storage Temperature Range

- 65 to +150

°C

Operating Junction Temperature

150

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case @ 85°C

27.3

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

0 (Minimum)

Machine Model

M1 (Minimum)

Charge Device Model

C2 (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD 22-A113, IPC/JEDEC J-STD-020

3

260

°C

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MW4IC001MR4

Rev. 3, 1/2005

Freescale Semiconductor

Technical Data

800-2170 MHz, 900 mW, 28 V

W-CDMA

RF LDMOS WIDEBAND

INTEGRATED POWER AMPLIFIERS

CASE 466-03, STYLE 1

PLD-1.5

PLASTIC

MW4IC001NR4

MW4IC001MR4

 Freescale Semiconductor, Inc., 2005. All rights reserved.