BAS86

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Vishay Semiconductors

Rev. 2.1, 16-Nov-2021

1

Document Number: 85511

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Small Signal Schottky Diode

LINKS TO ADDITIONAL RESOURCES

MECHANICAL DATA

Case: MiniMELF (SOD-80)

Weight: approx. 31 mg

Cathode band color: black

Packaging codes/options:

GS18/10K per 13" reel (8 mm tape), 10K/box

GS08/2.5K per 7" reel (8 mm tape), 12.5K/box

FEATURES

• For general purpose applications

• This diode features low turn-on voltage. The

devices are protected by a PN junction guard

ring

against

excessive

voltage,

such

as

electrostatic discharges

• Metal-on-silicon Schottky barrier device which

is protected by a PN junction guard ring

• The low forward voltage drop and fast switching make it

ideal for protection of MOS devices, steering, biasing and

coupling diodes for fast switching and low logic level

applications

• This diode is also available in a DO-35 case with type

designation BAT86

• Material categorization: for definitions of compliance

APPLICATIONS

• Applications where a very low forward voltage is required

Note

Note

333

DDD3 D

3D Models

PARTS TABLE

PART

ORDERING CODE

CIRCUIT CONFIGURATION

REMARKS

BAS86

BAS86-GS18 or BAS86-GS08

Single

Tape and reel

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Continuous reserve voltage

50

V

200

mA

δ ≤ 0.5

500

mA

200

mW

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

300

K/W

Junction temperature

125

°C

Ambient operating temperature range

-65 to +125

°C

Storage temperature range

-65 to +150

°C