BAS86 datasheet(2/4 Pages) VISHAY

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BAS86

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Vishay Semiconductors

Rev. 2.1, 16-Nov-2021

Document Number: 85511

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TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Max. Reverse Power Dissipation vs.

Junction Temperature

Fig. 2 - Reverse Current vs. Junction Temperature

Fig. 3 - Forward Current vs. Forward Voltage

Fig. 4 - Diode Capacitance vs. Reverse Voltage

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Reserve breakdown voltage

IR = 10 μA (pulsed)

V(BR)

Leakage current

VR = 40 V

5μA

Forward voltage

Pulse test tp < 300 μs,

IF = 0.1 mA,

δ < 2 %

200

300

Pulse test tp < 300 μs,

IF = 1 mA,

δ < 2 %

275

380

Pulse test tp < 300 μs,

IF = 10 mA,

δ < 2 %

365

450

Pulse test tp < 300 μs,

IF = 30 mA,

δ < 2 %

460

600

Pulse test tp < 300 μs,

IF = 100 mA,

δ < 2 %

700

900

Diode capacitance

VR = 1 V, f = 1 MHz

8pF

Reserve recovery time

IF = 10 mA, IR = 10 mA,

iR = 1 mA

trr

5ns

15827

100

150

200

250

300

350

400

450

500

100

125

150

Tj - Junction Temperature (°C)

- Limit

at 100 % V

- Limit

at 80 % V

RthJA = 540 K/W

VR = 50 V

100

1000

10000

100

125

150

15828

Tj - Junction Temperature (°C)

VR = VRRM

15829

0.5

1.0

1.5

0.1

100

1000

VF - Forward Voltage (V)

Tj = 25 °C

Tj = 125 °C

15830

0.1

100

f = 1 MHz

VR - Reverse Voltage (V)

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