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BY269 Datasheet(PDF) 1 Page - Vishay Siliconix |
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BY269 Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 4 page  BY268, BY269 www.vishay.com Vishay Semiconductors Rev. 1.8, 20-Feb-18 1 Document Number: 86005 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fast Avalanche Sinterglass Diode DESIGN SUPPORT TOOLS MECHANICAL DATA Case: SOD-57 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg FEATURES • Glass passivated junction • Hermetically sealed package • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • High voltage fast rectification diode 949539 click logo to get started Available Models ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY BY269 BY269TR 5000 per 10" tape and reel 25 000 BY269 BY269TAP 5000 per ammopack 25 000 PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE BY268 VR = 1400 V; IF(AV) = 0.8 A SOD-57 BY269 VR = 1600 V; IF(AV) = 0.8 A SOD-57 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT Reverse voltage See electrical characteristics BY268 VR 1400 V BY269 VR 1600 V Peak reverse voltage, non repetitive BY268 VRSM 1600 V BY269 VRSM 1800 V Peak forward surge current tp = 10 ms, half sine wave IFSM 20 A Average forward current IF(AV) 0.8 A Non repetitive reverse avalanche energy I(BR)R = 0.4 A ER 10 mJ Junction and storage temperature range Tj = Tstg -55 to +175 °C MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Junction ambient Lead length l = 10 mm, TL = constant RthJA 45 K/W On PC board with spacing 25 mm RthJA 100 K/W |
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