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GI810 Datasheet(PDF) 1 Page - Vishay Siliconix |
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GI810 Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 4 page  GI810, GI811, GI812, GI814, GI816, GI817, GI818 www.vishay.com Vishay General Semiconductor Revision: 13-Jun-16 1 Document Number: 88628 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For general purpose of medium frequency rectification. MECHANICAL DATA Case: DO-204AC, molded epoxy over glass body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes cathode end PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 50 V, 100 V, 200 V, 400 V, 600 V, 800 V, 1000 V IFSM 30 A trr 750 ns IR 10 μA VF 1.2 V TJ max. 175 °C Package DO-204AC (DO-15) Diode variation Single die DO-204AC (DO-15) SUPERECTIFIER ® MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL GI810 GI811 GI812 GI814 GI816 GI817 GI818 UNIT Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward rectified current 0.375" (9.5 mm) lead length at TA= 75 °C IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 30 A Operating junction and storage temperature range TJ, TSTG -65 to +175 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL GI810 GI811 GI812 GI814 GI816 GI817 GI818 UNIT Maximum instantaneous forward voltage 1.0 A VF 1.2 V Maximum DC reverse current at rated DC blocking voltage TA= 25 °C IR 10 μA TA= 100 °C 100 Maximum reverse recovery time IF = 1.0 A, VR = 30 V, dI/dt = 50 A/μs trr 750 ns Typical junction capacitance 4.0 V, 1 MHz CJ 25 pF |
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