ACE11011B datasheet(3/8 Pages) ACE

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ACE11011B

N-Channel Enhancement Mode Power MOSFET

VER 1.1

Electrical Characteristics

TA=25℃, unless otherwise specified.

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

(BR)DSS

GS = 0V, ID= 250μA

100

Zero Gate Voltage Drain Current

DSS

DS = 100V, VGS = 0V

μA

Gate Threshold Voltage

GS(TH)

GS = VDS, IDS= 250μA

2.1

Gate Leakage Current

GSS

VGS=±20V, VDS=0V

±100

Drain-Source On-state Resistance

DS(on)

GS = 10V, ID = 20A

4.3

5.5

mΩ

GS =6V, ID = 20A

5.2

6.7

GS = 4.5V, ID = 20A

6.8

8.7

Diode Forward Voltage

ISD= 1A , VGS=0V

0.69

1.2

Diode Forward Current *AC

TC =25°C

Switching

Total Gate Charge

VGS=10V ,VDS=50V,

ID=15A

Gate-Source Charge

Gate-Drain Charge

Turn-on Delay Time

d ( on )

VGEN=10V,VDD=50V,

RL=3.3

Ω, R

G=1

Ω, I

D=15A

Turn-on Rise Time

Turn-off Delay Time

d( off )

Turn-Off Fall Time

6.5

Dynamic

Input Capacitance

Ciss

VDS=50V,VGS=0V,

f=1.0MHz

3720

Output Capacitance

Coss

284

Reverse Transfer Capacitance

Crss

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