GSD2004WS

www.vishay.com

Vishay Semiconductors

Rev. 2.1, 14-Jul-17

1

Document Number: 85730

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Small Signal Switching Diode, High Voltage

DESIGN SUPPORT TOOLS click logo to get started

MECHANICAL DATA

Case: SOD-323

Weight: approx. 4.3 mg

Packaging codes / options:

18/10K per 13

" reel (8 mm tape), 10K/box

08/3K per 7

" reel (8 mm tape), 15K/box

FEATURES

• Silicon epitaxial planar diode

• Fast switching diode, especially suited for

applications requiring high voltage capability

• AEC-Q101 qualified available

• Base P/N-E3 - RoHS-compliant, commercial

grade

• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified

• Material categorization: for definitions of compliance

Note

Available

Models

PARTS TABLE

PART

ORDERING CODE

CIRCUIT CONFIGURATION

TYPE MARKING

REMARKS

GSD2004WS

GSD2004WS-E3-08 or GSD2004WS-E3-18

Single

B6

Tape and reel

GSD2004WS-HE3-08 or GSD2004WS-HE3-18

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Continuous reverse voltage

240

V

Repetitive peak reverse voltage

300

V

Forward current (continuous)

225

mA

Peak repetitive forward current

625

mA

Non-repetitive peak forward current

4A

1A

200

mW

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Typical thermal resistance junction to

650

K/W

Junction temperature

150

°C

Storage temperature range

-65 to +150

°C

Operating temperature range

-55 to +150

°C