GSD2004WS datasheet(2/4 Pages) VISHAY

2 / 4 page

GSD2004WS

www.vishay.com

Vishay Semiconductors

Rev. 2.1, 14-Jul-17

Document Number: 85730

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TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Forward Current vs. Forward Voltage

Fig. 2 - Admissible Forward Current vs. Ambient Temperature

Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature

Fig. 4 - Leakage Current vs. Junction Temperature

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Reverse breakdown voltage

IR = 100 μA

VBR

300

Leakage current

VR = 240 V

100

VR = 240 V, Tj = 150 °C

100

μA

Forward voltage

IF = 20 mA

0.83

0.87

IF = 100 mA

Diode capacitance

VF = VR = 0, f = 1 MHz

5pF

Reverse recovery time

IF = IR = 30 mA, iR = 3 mA,

RL = 100

trr

18858

1000

100

0.1

0.01

0.4

0.6

0.8

0.2

VF - Forward Voltage (V)

Tj = 100 °C

25 °C

0.1

0.2

0.3

120

150

18859

Tamb - Ambient Temperature (°C)

Current (rectif.) O

DC current IF

200

18864

Tamb - Ambient Temperature (°C)

250

200

150

100

20 40 60 80 100 120 140 160 180

0.1

18862_4

100

1000

120

160

200

Tj - Junction Temperature (°C)

Reverse Voltage

GSD2004WS VR = 240 V

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