V40DM45C

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Vishay General Semiconductor

Revision: 18-Mar-2019

1

Document Number: 87587

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

DESIGN SUPPORT TOOLS AVAILABLE

FEATURES

• Trench MOS Schottky technology

• Very low profile - typical height of 1.7 mm

• Ideal for automated placement

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets

MSL

level

1,

per

J-STD-020,

LF maximum peak of 260 °C

• AEC-Q101 qualified available:



- Automotive ordering code: base P/NHM3

• Material categorization: for definitions of compliance

TYPICAL APPLICATIONS

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection in commercial, industrial, and

automotive application.

MECHANICAL DATA

Case: SMPD (TO-263AC)



Molding compound meets UL 94 V-0 flammability rating



Base P/N-M3 - halogen-free, RoHS-compliant



Base

P/NHM3

-

halogen-free,

RoHS-compliant,

and

AEC-Q101 qualified

Terminals:

matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102



M3 and HM3 suffix meet JESD 201 class 2 whisker test

Polarity: as marked

Notes

PRIMARY CHARACTERISTICS

2 x 20 A

45 V

240 A

0.48 V

175 °C

Package

SMPD (TO-263AC)

Circuit configuration

Common cathode

Top View

Bottom View

Anode 1

Anode 2

K

Cathode

eSMP

SMPD (TO-263AC)

K

1

2

33

DD3 D

3D Models

Available

PARAMETER

SYMBOL

V40DM45C

UNIT

Device marking code

V40DM45C

Maximum repetitive peak reverse voltage

45

V

Maximum average forward rectified current



(fig. 1)

per device

40

A

per diode

20

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

240

A

Operating junction temperature range

-40 to +175

°C

Storage temperature range

-55 to +175