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4800 Datasheet(PDF) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co

Part # 4800
Description  N-Channel Reducded Qg, Fast Switching MOSFET
PDF  4 Pages
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Manufacturer  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
Direct Link  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

4800 Datasheet(HTML) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co

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4800
1
N-Channel Reducded Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
30
0.020@ VGS
= 10 V
9
30
0.033 @ VGS = 4.5 V
7
SD
S
D
SD
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
N-Channel MOSFET
DD
G
S
D
D
S
S
Ordering Information: Si4800
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
"25
V
Continuous Drain Current (TJ = 150_C)a, b
TA = 25_C
ID
9
Continuous Drain Current (TJ = 150_C)a, b
ID
A
Pulsed Drain Current (10
ms Pulse Width)
IDM
40
A
Continuous Source Current (Diode Conduction)a, b
IS
2.3
Maximum Power Dissipationa, b
TA = 25_C
PD
2.5
W
Maximum Power Dissipationa, b
PD
W
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction to Ambient (MOSFET)a
t
v 10 sec
R
50
_C/W
Maximum Junction-to-Ambient (MOSFET)a
Steady State
RthJA
70
_C/W
Notes
a.
Surface Mounted on FR4 Board.
b.
t
v 10 sec.
Shenzhen Tuofeng Semiconductor Technology Co., Ltd


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