4800 datasheet(2/4 Pages) TUOFENG

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MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

0.8

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

Zero Gate Voltage Drain Current

IDSS

VDS = 24 V, VGS = 0 V

Zero Gate Voltage Drain Current

IDSS

On-State Drain Currenta

ID(on)

VDS w 5 V, VGS = 10 V

Drain-Source On-State Resistancea

rDS(on)

VGS = 10 V, ID = 9 A

0.0

Drain-Source On-State Resistancea

rDS(on)

VGS = 4.5 V, ID = 7 A

0.033

Forward Transconductancea

gfs

VDS = 15 V, ID = 9 A

Diode Forward Voltagea

VSD

IS = 2.3 A, VGS = 0 V

0.71

1.2

Dynamicb

Total Gate Charge

8.7

Gate-Source Charge

Qgs

VDS = 15 V, VGS = 5.0 V, ID = 9 A

2.25

Gate-Drain Charge

Qgd

4.2

Gate Resistance

0.5

1.5

2.6

Turn-On Delay Time

td(on)

Rise Time

VDD = 15 V, RL = 15 W

Turn-Off Delay Time

td(off)

VDD = 15 V, RL = 15 W

ID ^ 1 A, VGEN = 10 V, RG = 6 W

Fall Time

Source-Drain Reverse Recovery Time

trr

IF = 2.3 A, di/dt = 100 A/ms

Notes

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

Guaranteed by design, not subject to production testing.

4800

Shenzhen Tuofeng Semiconductor Technology Co., Ltd

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