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4803B Datasheet(PDF) 3 Page - Shenzhen Tuofeng Semiconductor Technology Co

Part # 4803B
Description  P-Channel Enhancement Mode Power MOSFET
PDF  5 Pages
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Manufacturer  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
Direct Link  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

4803B Datasheet(HTML) 3 Page - Shenzhen Tuofeng Semiconductor Technology Co

  4803B Datasheet HTML 1Page - Shenzhen Tuofeng Semiconductor Technology Co 4803B Datasheet HTML 2Page - Shenzhen Tuofeng Semiconductor Technology Co 4803B Datasheet HTML 3Page - Shenzhen Tuofeng Semiconductor Technology Co 4803B Datasheet HTML 4Page - Shenzhen Tuofeng Semiconductor Technology Co 4803B Datasheet HTML 5Page - Shenzhen Tuofeng Semiconductor Technology Co  
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www.sztuofeng.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
0.00
1.00
2.00
3.00
4.00
5.00
-VDS (Volts)
Figure 1: On-Region Characteristics
VGS=-3V
-3.5V
-4V
-10V
-4.5V
-5V
0
2
4
6
8
10
01
23
4
-VGS(Volts)
Figure 2: Transfer Characteristics
25°C
125°C
VDS=-5V
20
40
60
80
100
13579
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
VGS=-4.5V
VGS=-10V
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics
25°C
125°C
8.00E-01
1.00E+00
1.20E+00
1.40E+00
1.60E+00
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
VGS=-10V
VGS=-4.5V
20
40
60
80
100
120
140
160
24
68
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
ID=-5A
25°C
125°C
ID=-5A
-2.5V
-6V
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOP-8 Plastic-Encapsulate MOSFETS
4803B



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