Electronic Components Datasheet Search
  English  ▼

X  

4803B Datasheet(PDF) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

Part # 4803B
Description  P-Channel Enhancement Mode Power MOSFET
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
Direct Link  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

4803B Datasheet(HTML) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

  4803B Datasheet HTML 1Page - Shenzhen Tuofeng Semiconductor Technology Co 4803B Datasheet HTML 2Page - Shenzhen Tuofeng Semiconductor Technology Co 4803B Datasheet HTML 3Page - Shenzhen Tuofeng Semiconductor Technology Co 4803B Datasheet HTML 4Page - Shenzhen Tuofeng Semiconductor Technology Co 4803B Datasheet HTML 5Page - Shenzhen Tuofeng Semiconductor Technology Co  
Zoom Inzoom in Zoom Outzoom out
 2 / 5 page
background image
Page
v1.0
2
www.sztuofeng.com
Symbol
Min
Typ
Max
Units
BVDSS
-30
V
-1
00
IGSS
±100
nA
VGS(th)
-1.1
-1.4
V
ID(ON)
-20
A
60
m
Ω
gFS
6
8.6
S
VSD
-0.7
-1
V
IS
- 2.3A
Ciss
700
pF
Coss
120
pF
Crss
75
pF
Rg
10
Ω
Qg (10V)
14.7
nC
Qg (4.5V)
7.6
nC
Qgs
2nC
Qgd
3.8
nC
tD(on)
8.3
ns
tr
5ns
tD(off)
29
ns
tf
14
ns
trr
23.5
ns
Qrr
13.4
nC
DYNAMIC PARAMETERS
Maximum Body-Diode Continuous Current
Gate resistance
VGS=0V, VDS=0V, f=1MHz
VGS=0V, VDS=-15V, f=1MHz
Input Capacitance
Output Capacitance
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-15V, RL=3Ω,
RGEN=3Ω
Turn-Off Fall Time
Turn-On DelayTime
SWITCHING PARAMETERS
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
Total Gate Charge (10V)
VGS=-10V, VDS=-15V, ID=-5A
m
Ω
VGS=-4.5V, ID=-4.0A
IS=-1A,VGS=0V
VDS=-5V, ID=-5A
RDS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
A
Gate Threshold Voltage
VDS=VGS ID=-250µA
VDS= -24V, VGS =0V
VDS=0V, VGS=±25V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID=-250µA, VGS=0V
VGS=-4.5V, VDS=-5V
VGS=-10V, ID=-5.0A
Reverse Transfer Capacitance
IF=-5A, dI/dt=100A/µs
A: The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The
SOA curve provides a single pulse rating.
n
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOP-8 Plastic-Encapsulate MOSFETS
4803B
55
45
50
-2.1



Html Pages

1 2 3 4 5


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com