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4803B Datasheet(PDF) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co |
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4803B Datasheet(HTML) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co |
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2 / 5 page ![]() Page v1.0 2 www.sztuofeng.com Symbol Min Typ Max Units BVDSS -30 V -1 00 IGSS ±100 nA VGS(th) -1.1 -1.4 V ID(ON) -20 A 60 m Ω gFS 6 8.6 S VSD -0.7 -1 V IS - 2.3A Ciss 700 pF Coss 120 pF Crss 75 pF Rg 10 Ω Qg (10V) 14.7 nC Qg (4.5V) 7.6 nC Qgs 2nC Qgd 3.8 nC tD(on) 8.3 ns tr 5ns tD(off) 29 ns tf 14 ns trr 23.5 ns Qrr 13.4 nC DYNAMIC PARAMETERS Maximum Body-Diode Continuous Current Gate resistance VGS=0V, VDS=0V, f=1MHz VGS=0V, VDS=-15V, f=1MHz Input Capacitance Output Capacitance Turn-On Rise Time Turn-Off DelayTime VGS=-10V, VDS=-15V, RL=3Ω, RGEN=3Ω Turn-Off Fall Time Turn-On DelayTime SWITCHING PARAMETERS Total Gate Charge (4.5V) Gate Source Charge Gate Drain Charge Total Gate Charge (10V) VGS=-10V, VDS=-15V, ID=-5A m Ω VGS=-4.5V, ID=-4.0A IS=-1A,VGS=0V VDS=-5V, ID=-5A RDS(ON) Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage IDSS A Gate Threshold Voltage VDS=VGS ID=-250µA VDS= -24V, VGS =0V VDS=0V, VGS=±25V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs Drain-Source Breakdown Voltage On state drain current ID=-250µA, VGS=0V VGS=-4.5V, VDS=-5V VGS=-10V, ID=-5.0A Reverse Transfer Capacitance IF=-5A, dI/dt=100A/µs A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. n SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4803B 55 45 50 -2.1 |
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