4953B datasheet(2/6 Pages) TUOFENG

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Electrical Characteristics

A = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max Units

Off Characteristics

BVDSS

Drain–Source Breakdown Voltage

VGS = 0 V, ID = –250

µA

–20

IDSS

Zero Gate Voltage Drain Current

VDS = –16 V,

VGS = 0 V

–1

µA

IGSSF

Gate–Body Leakage, Forward

VGS = –10 V,

VDS = 0 V

–100

IGSSR

Gate–Body Leakage, Reverse

VGS = 10 V,

VDS = 0 V

100

On Characteristics

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = –250

µA

–1

–1.7

–3

RDS(on)

Static Drain–Source

On–Resistance

VGS = –2.5 V,

ID = –2.5 A

VGS = –4.5 V,

ID = –3.5 A

110

Ω

ID(on)

On–State Drain Current

VGS = –4.5V,

VDS = –4.5 V

–10

gFS

Forward Transconductance

VDS = –5 V,

ID = –2 A

Dynamic Characteristics

Ciss

Input Capacitance

405

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

VDS = –10 V,

V GS = 0 V,

f = 1.0 MHz

Switching Characteristics

td(on)

Turn–On Delay Time

Turn–On Rise Time

td(off)

Turn–Off Delay Time

Turn–Off Fall Time

VDD = –10 V,

ID = –1 A,

VGS = –4.5V,

RGEN = 10

Ω

Total Gate Charge

3.3

Qgs

Gate–Source Charge

0.7

Qgd

Gate–Drain Charge

VDS = –10 V,

ID = –3 A,

VGS = –2.5V

1.3

Drain–Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain–Source Diode Forward Current

–1.3

VSD

Drain–Source Diode Forward

Voltage

VGS = 0 V, IS = –1.3 A

–0.8

–1.2

Notes:

1. RθJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. RθJCis guaranteed by design while RθCAis determined by the user's board design.

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

4953B

Dual 20V P-Channel PowerTrench®

® MOSFET

SOP-8L

www.sztuofeng.com

Feb,2018 V1.0

4953B Datasheet(PDF) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

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