8810 datasheet(1/4 Pages) TUOFENG

Part #	8810

Description	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

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Manufacturer	TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]

Direct Link	http://www.sztuofeng.com/?lang=en

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1 / 4 page

Symbol

VDS

VGS

IDM

TJ, TSTG

Symbol

Typ

Max

64

83

89

120

RθJL

53

70

W

Maximum Junction-to-Lead

C

Steady-State

°C/W

Thermal Characteristics

Parameter

Units

Maximum Junction-to-Ambient

A

t ≤ 10s

RθJA

°C/W

Maximum Junction-to-Ambient

A

Steady-State

°C/W

±12

Gate-Source Voltage

Drain-Source Voltage

20

Continuous Drain

Current

A

Maximum

Units

Parameter

TA=25°C

Absolute Maximum Ratings TA=25°C unless otherwise noted

V

30

Pulsed Drain Current

B

Power Dissipation

A

TA=25°C

Junction and Storage Temperature Range

A

PD

°C

1.5

-55 to 150

ID

6

Common-Drain Dual N-Channel Enhancement Mode Field

Effect Transistor

Features

VDS (V) = 20V

ID = 6A (V GS = 4.5V)

RDS(ON) < 15mΩ (VGS = 4.5V)

RDS(ON) <

m

Ω (VGS = 2.5V)

ESD Rating: 2000V HBM

General Description

The 8810 uses advanced trench technology to provide

excellent RDS(ON), low gate charge and operation with gate

voltages as low as 1.8V. This device is suitable for use as a

load switch or in PWM applications. It is ESD protected.

Standard Product 8810 is Pb-free (meets ROHS & Sony 259

specifications). 8810 is electrically identical.

G1

S1

D1/D2

G2

S2

D1/D2

1

2

3

4

8

7

6

5

TSSOP-8

Top View

G1

D1

S1

G2

D2

S2

Shenzhen Tuofeng Semiconductor Technology Co., Ltd

8810

19

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8810 Datasheet(PDF) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co

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