FDN338 datasheet(3/5 Pages) TUOFENG

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-V

, DRAIN-SOURCE VOLTAGE (V)

= -4.5V

-2.5

-4.0

-3.0

-3.5

-2.0

-1.5

Typical Electrical Characteristics

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

-50

-25

100

125

150

0.6

0.8

1.2

1.4

1.6

T , JUNCTION TEMPERATURE (°C)

= -4.5V

I = -1.6A

Figure 3. On-Resistance Variation

with Temperature.

-V

, GATE TO SOURCE VOLTAGE (V)

= -5V

T = -55°C

125°C

25°C

Figure 5. Transfer Characteristics.

0.2

0.4

0.6

0.8

1.2

1.4

0.0001

0.001

0.01

0.1

-V

, BODY DIODE FORWARD VOLTAGE (V)

25°C

-55°C

= 0V

T = 125°C

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

0.1

0.2

0.3

0.4

0.5

-V

,GATE TO SOURCE VOLTAGE (V)

25°C

T = 125°C

I = -0.8A

0.8

1.2

1.4

1.6

1.8

-I , DRAIN CURRENT (A)

= -2.0V

-3.0

-3.5

-4.5

-4.0

-2.5

Figure 6 . Body Diode Forward Voltage

Variation with Source Current

and Temperature.

FDN338

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

SOT-23 Plastic-Encapsulate MOSFETS

www.sztuofeng.com

,2018 V1.0

Apr

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