FDN338 datasheet(1/5 Pages) TUOFENG

Part #	FDN338

Description	P-Channel 20-V(D-S) MOSFET

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]

Direct Link	http://www.sztuofeng.com/?lang=en

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1 / 5 page

Absolute Maximum Ratings T

A = 25

o

C unless other wise noted

Symbol

Parameter

FDN338

Units

V

DSS

Drain-Source Voltage

-20

V

GSS

Gate-Source Voltage - Continuous

±8

V

I

D

Drain/Output Current - Continuous

-1.6

A

- Pulsed

-5

P

D

Maximum Power Dissipation

(Note 1a)

0.5

W

(Note 1b)

0.46

T

J,TSTG

Operating and Storage Temperature Range

-55 to 150

°C

THERMAL CHARACTERISTICS

RθJA

Thermal Resistance, Junction-to-Ambient (Note 1a)

250

°C/W

RθJC

Thermal Resistance, Junction-to-Case

(Note 1)

75

°C/W

FDN338

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

SOT-23 Plastic-Encapsulate MOSFETS

P-Channel 20-V(D-S) MOSFET

General FEATURE

●

TrenchFET Power MOSFET

●

Lead free product is acquired

●

Surface mount package

APPLICATION

●

Load Switch for Portable Devices

●

DC/DC Converter

SOT-23

MARKING

Equivalent Circuit

338T w

1.GATE

2.SOURCE

3.DRAIN

*w：week code

1

2

3

V(BR)DSS

RDS(on)MAX

ID

-20V

0.110Ω@-4.5V

-1.6A

0.150 Ω@-2.5V

FDN338

www.sztuofeng.com

1

,2018 V1.0

Apr

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FDN338 Datasheet(PDF) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co

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