IRLML6401 datasheet(2/6 Pages) TUOFENG

2 / 6 page

www.sztuofeng.com

Feb,2018 V1.0

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

SOT-23 Plastic-Encapsulate MOSFETS

MOSFET ELECTRICAL CHARACTERISTICS

Ta =25 ℃ unless otherwise specified

Parameter

Symbol

Test Condition

Min

Typ

Max Units

Static

Drain-source breakdown voltage

V(BR)DSS VGS = 0V, ID =-250µA

-15

Gate-source threshold voltage

VGS(th)

VDS =VGS, ID =-250µA

-0.4

-0.7

-1

Gate-source leakage

IGSS

VDS =0V, VGS =±8V

±100

Zero gate voltage drain current

IDSS

VDS =-12V, VGS =0V

-100

Drain-source on-state resistance a

RDS(on)

VGS =-4.5V, ID =-4.3A

0.038

0.042

Ω

VGS =-2.5V, ID =-4.1A

0.050

0.055

VGS =-1.8V, ID =-2.0A

0.070

0.075

Forward transconductance a

gfs

VDS =-5V, ID =-2.0A

5.0

Dynamicb

Input capacitance

Ciss

740

Output capacitance

Coss

290

Reverse transfer capacitance

Crss

190

Total gate charge

7.8

Gate-source charge

Qgs

1.2

Gate-drain charge

Qgd

1.6

Gate resistance

f =1MHz

1.9

Ω

Turn-on delay time

td(on)

12.0

Rise time

35.0

Turn-off delay time

td(off)

30.0

Fall time

10.0

Drain-source body diode characteristics

Continuous source-drain diode current

TC=25

℃

-1.6

Body diode voltage

VSD

IS=-1.6A

-0.8

-1.2

Notes :

a.Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%.

b.Guaranteed by design, not subject to production testing.

VDS=-4V,VGS=0V, F=1.0MHz

VDD=-4V,ID=-3.3A ,

RL=-1.2Ω,VGEN=-4.5V,Rg=1Ω

VDS=-4V,ID=-4.3A,VGS=-4.5V

IRLML6401

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