TF2319 datasheet(2/5 Pages) TUOFENG

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SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

SOT-23 Plastic-Encapsulate MOSFETS

TF2319

www.sztuofeng.com

Feb,2018 V1.0

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Limits

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = −250 mA

−40

Gate-Threshold Voltage

VGS(th)

VDS = VGS, ID = −250 mA

−1.0

−3.0

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

Zero Gate Voltage Drain Current

IDSS

VDS = −36 V, VGS = 0 V

−50

Zero Gate Voltage Drain Current

IDSS

On-State Drain Currenta

ID(on)

VDS v −5 V, VGS = −10 V

−6

Drain Source On Resistancea

rDS( )

VGS = −10 V, ID = −3.0 A

0.065

0.082

Drain-Source On-Resistancea

rDS(on)

VGS = −4.5 V, ID = −2.4 A

0.100

0.130

Forward Transconductancea

gfs

VDS = −5 V, ID = −3.0 A

7.0

Diode Forward Voltage

VSD

IS = −1.25 A, VGS = 0 V

−0.8

−1.28

Dynamicb

Total Gate Charge

11.3

Gate-Source Charge

Qgs

VDS = −20 V, VGS = −10 V

ID ^ −3 A

1.7

Gate-Drain Charge

Qgd

ID ^ −3 A

3.3

Input Capacitance

Ciss

470

Output Capacitance

Coss

VDS = −20 V, VGS = 0, f = 1 MHz

Reverse Transfer Capacitance

Crss

Switchingc

Turn On Time

td(on)

Turn-On Time

VDD = −20 V, RL =20 W

ID ^ −10 A VGEN = −45 V

Turn-Off Time

td(off)

ID ^ −1.0 A, VGEN = −4.5 V

Rg = 6 W

Turn-Off Time

Notes

Pulse test: PW v300 ms duty cycle v2%.

For DESIGN AID ONLY, not subject to production testing.

Switching time is essentially independent of operating temperature.

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