4611 datasheet(5/8 Pages) TUOFENG

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Symbol

Min

Typ

Max

Units

BVDSS

-60

-1

IGSS

±100

VGS(th)

-1.5

-1.9

-3

ID(ON)

-30

Ω

gFS

17.8

VSD

-0.73

-1

-3

Ciss

2417

2900

Coss

179

Crss

120

1.9

2.3

Ω

Qg(10V)

45.2

Qg(4.5V)

22.8

Qgs

5.8

Qgd

9.6

tD(on)

9.8

6.1

tD(off)

12.7

trr

Qrr

Body Diode Reverse Recovery Time

IF=-4.9A, dI/dt=100A/µs

Body Diode Reverse Recovery Charge IF=-4.9A, dI/dt=100A/µs

Turn-On DelayTime

VGS=-10V, VDS=-30V, RL=6.2Ω,

RGEN=3Ω

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Total Gate Charge (4.5V)

Gate Source Charge

Gate Drain Charge

SWITCHING PARAMETERS

Total Gate Charge (10V)

VGS=-10V, VDS=-30V, ID=-4.9A

Reverse Transfer Capacitance

Gate resistance

DYNAMIC PARAMETERS

Input Capacitance

VGS=0V, VDS=-30V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

Diode Forward Voltage

IS=-1A,VGS=0V

Maximum Body-Diode Continuous Current

Output Capacitance

VDS=-5V, ID=-4.9A

RDS(ON)

Static Drain-Source On-Resistance

Forward Transconductance

VGS=-10V, ID=-4.9A

Ω

VGS=-4.5V, ID=-4.4A

Gate Threshold Voltage

VDS=VGS ID=-250µA

On state drain current

VGS=-10V, VDS=-5V

µA

Gate-Body leakage current

VDS=0V, VGS=±20V

Drain-Source Breakdown Voltage

ID=-250µA, VGS=0V

IDSS

Zero Gate Voltage Drain Current

VDS=-48V, VGS=0V

P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)

Parameter

Conditions

STATIC PARAMETERS

A: The value of R θJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C.

The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal

resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The

SOA curve provides a single pulse rating.

A: The value of R θJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C.

The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal

resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The

SOA curve provides a single pulse rating.

Rev5: Nov. 2010

Page

v1.0

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

SOP-8 Plastic-Encapsulate MOSFETS

4611

4611 Datasheet(PDF) 5 Page - Shenzhen Tuofeng Semiconductor Technology Co

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