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TF207N Datasheet(PDF) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co |
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TF207N Datasheet(HTML) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co |
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1 / 5 page ![]() www.sztuofeng.com SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD 1 N-Channel 20-V(D-S) MOSFET SOT-23-3L 1.GATE 2.SOURCE 3.DRAIN w 1 2 3 TF207N 207N SOT-23-3L Plastic-Encapsulate MOSFETS TF207N Y Sep 2019 V1.0 ABSOLUTE MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±12 V Continuous Drain Current ID A Pulsed Drain Current (note 1) IDM 25 A Thermal Resistance from Junction to Ambient (note 2) RθJA 100 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) TL 260 ℃ V 6 V(BR)DSS RDS(on) ID 20V 0.013 Ω @ 4.5V 6.0A 0.015 Ω @ 2.5V MARKING Equivalent Circuit FEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package APPLICATION Load Switch Power Management Max Y :year code W :week code |
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