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TF25115 Datasheet(PDF) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co

Part # TF25115
Description  N-Channel Enhancement Mode Power MOSFET
PDF  6 Pages
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Manufacturer  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
Direct Link  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

TF25115 Datasheet(HTML) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co

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Page 1
N-Channel Enhancement Mode Power MOSFET
Description
The TF25115 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 2.5V.
General Features
●
VDS = 25V ,ID = 115A
RDS(ON) < 3.0mΩ @ VGS=4.5V
RDS(ON) < 4.0mΩ @ VGS=2.5V
●
High power and current handing capability
●
Lead free product is acquired
●
Surface mount package
Application
●
Battery Switch
●
Load switch
●
Power management
Schematic diagram
Pin assignment
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
25
V
Gate-Source Voltage
VGS
±12
V
TA =25℃
115
Continuous Drain Current (TJ =150℃)
TA =70℃
ID
25
A
Drain Current-Pulsed
(Note 1)
IDM
180
A
Maximum Power Dissipation
PD
60
W
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient
(Note 2)
RθJA
2.0
/W
℃
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
PDFN 3333 Plastic-Encapsulate MOSFETS
TF25115
TF
25115
CYWP
S
S S
G
D
D
D
D
Pin 1
PIN1
Top View
BottomView
PDFN3333-8L
Y :year code W :week code
www.sztuofeng.com
Jun 2020 V1.0
S
D
G


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