Electronic Components Datasheet Search
  English  ▼

X  

Preview PDF HTML

TF25115 Datasheet(PDF) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

Part # TF25115
Description  N-Channel Enhancement Mode Power MOSFET
PDF  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
Direct Link  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

TF25115 Datasheet(HTML) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

  TF25115 Datasheet HTML 1Page - Shenzhen Tuofeng Semiconductor Technology Co TF25115 Datasheet HTML 2Page - Shenzhen Tuofeng Semiconductor Technology Co TF25115 Datasheet HTML 3Page - Shenzhen Tuofeng Semiconductor Technology Co TF25115 Datasheet HTML 4Page - Shenzhen Tuofeng Semiconductor Technology Co TF25115 Datasheet HTML 5Page - Shenzhen Tuofeng Semiconductor Technology Co TF25115 Datasheet HTML 6Page - Shenzhen Tuofeng Semiconductor Technology Co  
Zoom Inzoom in Zoom Outzoom out
 2 / 6 page
background image
2
Page
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS
VDS=25V,VGS=0V
-
-
1
μA
Gate-Body Leakage Current
IGSS
VGS=±12V,VDS=0V
-
-
±100
nA
On Characteristics
(Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μ
0.5
VGS=4.5V, ID
2.4
Drain-Source On-State Resistance
RDS(ON)
VGS=2.5V, ID=20A
mΩ
Forward Transconductance
gFS
VDS=5V,ID=20A
Dynamic Characteristics
(Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS=15V,VGS=0V,
F=1.0MHz
Switching Characteristics
(Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
VDD=10V,ID=20A
VGS=4.5V,RGEN=3.0Ω
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=10V,ID=20A,
VGS=4.5V
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
VSD
VGS=0V,IS=20A
Diode Forward Current
(Note 2)
IS
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
TJ = 25°C, IF = 20A
di/dt = 100A/μs
(Note3)
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t ≤ 10 sec.
3.
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4.
Guaranteed by design, not subject to production
5.
EAS condition：Tj=25℃,VDD=15V,VG=10V,L=0.5mH,Rg=25Ω
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
PDFN 3333 Plastic-Encapsulate MOSFETS
=20A
3.0
-
3.2
4.0
-
www.sztuofeng.com
Jun 2020 V1.0
A
V
0.75
1.2
S
-
-
20
V
-
-
1.2
A
-
-
115
PF
-
-
3611
PF
-
-
1865
PF
-
-
73
nS
-
-
9
nS
-
-
35
nS
-
-
5
nS
-
-
15
nC
-
-
5.6
nC
-
-
6.5
nC
-
-
28.1
nS
-
-
24
uC
-
-
30
TF25115
V
-
-
25



Html Pages

1 2 3 4 5 6


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com