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HFM2012 Datasheet(PDF) 1 Page - Rectron Semiconductor |
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HFM2012 Datasheet(HTML) 1 Page - Rectron Semiconductor |
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1 / 7 page ![]() SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER VOLTAGE 1200 Volts CURRENT 2.0 Ampere MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 oC ambient temperature unless otherwise specified. resistive or inductive load. MAXIMUM RATINGS (@ TA=25 OC unless otherwise noted) ELECTRICAL CHARACTERISTICS(@TA=25 OC unless otherwise noted) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at TL = 90 OC Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 1) SYMBOL VRRM VDC IFSM TSTG VRMS UNITS Volts Volts Volts Amps 2.0 40 Amps 0 C/W 0 C Storage Temperature Range R θ JL 20 IO Operating Temperature Range TJ -55 to + 175 0 C HFM2012 1200 1200 840 2021-08 REV: O CHARACTERISTICS Maximum Average Reverse Current Maximum Reverse Recovery Time (Note 2) at Rated DC Blocking Voltage VF SYMBOL I trr R μA μA Maximum Instantaneous Forward Voltage at 2.0A DC Volts 5 200 75 nSec @TA = 25 oC @TA = 150 oC UNITS 1.75 NOTES : 1. Thermal Resistance : Mounted on PCB. 2. Test Conditions: IF= 0.5A, IR= -1.0A, IRR= -0.25A. FEATURES * Ideal for surface mounted applications * Glass passivated device * Low leakage current * Metallurgically bonded construction * Mounting position: Any * Weight: 0.104 gram * Epoxy: Device has UL flammability classification 94V-O MECHANICAL DATA DO-214AA *Dimensions in inches and (millimeters) 0.091 (2.30) 0.067 (1.70) 0.155 (3.94) 0.130 (3.30) 0.185 (4.70) 0.160 (4.06) 0.098 (2.50) 0.083 (2.10) 0.060 (1.52) 0.030 (0.76) 0.224 (5.70) 0.201 (5.10) 0.012 (0.305) 0.006 (0.152) 0.012 (0.30) 0.00 (0.00) 6.64 -55 to + 175 HFM2012 HFM2012 |
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