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MBR3045PT Datasheet(PDF) 1 Page - Vishay Siliconix |
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MBR3045PT Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 4 page ![]() MBR3035PT, MBR3045PT, MBR3050PT, MBR3060PT www.vishay.com Vishay General Semiconductor Revision: 27-May-2020 1 Document Number: 88676 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Dual Common Cathode Schottky Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max., 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, or polarity protection application. MECHANICAL DATA Case: TO-3P (TO-247AD) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: as marked Mounting Torque: 10 in-lbs maximum Note (1) 2.0 μs pulse width, f = 1.0 kHz PRIMARY CHARACTERISTICS IF(AV) 30 A VRRM 35 V, 45 V, 50 V, 60 V IFSM 200 A VF 0.60 V, 0.65 V TJ max. 150 °C Package TO-3P (TO-247AD) Circuit configuration Common cathode TO-3P (TO-247AD) 1 2 3 PIN 1 PIN 3 CASE PIN 2 MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR3035PT MBR3045PT MBR3050PT MBR3060PT UNIT Maximum repetitive peak reverse voltage VRRM 35 45 50 60 V Maximum working peak reverse voltage VRWM 35 45 50 60 V Maximum DC blocking voltage VDC 35 45 50 60 V Maximum average forward rectified current (fig. 1) IF(AV) 30 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 200 A Peak repetitive reverse surge current at tp = 2 μs, 1 kHz per diode IRRM (1) 2.0 1.0 A Voltage rate of change (rated VR) dV/dt 10 000 V/μs Operating junction temperature range TJ -65 to +150 °C Storage temperature range TSTG -65 to +175 °C |
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