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MBR3045PT Datasheet(PDF) 1 Page - Vishay Siliconix

Part # MBR3045PT
Description  Dual Common Cathode Schottky Rectifier
PDF  4 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

MBR3045PT Datasheet(HTML) 1 Page - Vishay Siliconix

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MBR3035PT, MBR3045PT, MBR3050PT, MBR3060PT
www.vishay.com
Vishay General Semiconductor
Revision: 27-May-2020
1
Document Number: 88676
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual Common Cathode Schottky Rectifier
FEATURES
• Power pack
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max., 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode
power
supplies,
freewheeling
diodes,
DC/DC
converters, or polarity protection application.
MECHANICAL DATA
Case: TO-3P (TO-247AD)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
Note
(1) 2.0 μs pulse width, f = 1.0 kHz
PRIMARY CHARACTERISTICS
IF(AV)
30 A
VRRM
35 V, 45 V, 50 V, 60 V
IFSM
200 A
VF
0.60 V, 0.65 V
TJ max.
150 °C
Package
TO-3P (TO-247AD)
Circuit configuration
Common cathode
TO-3P (TO-247AD)
1
2
3
PIN 1
PIN 3
CASE
PIN 2
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR3035PT MBR3045PT MBR3050PT MBR3060PT
UNIT
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
V
Maximum working peak reverse voltage
VRWM
35
45
50
60
V
Maximum DC blocking voltage
VDC
35
45
50
60
V
Maximum average forward rectified current (fig. 1)
IF(AV)
30
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
200
A
Peak repetitive reverse surge current at tp = 2 μs, 1 kHz 
per diode
IRRM (1)
2.0
1.0
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
Operating junction temperature range
TJ
-65 to +150
°C
Storage temperature range
TSTG
-65 to +175
°C


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