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MBR3045PT Datasheet(PDF) 2 Page - Vishay Siliconix |
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MBR3045PT Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 4 page ![]() MBR3035PT, MBR3045PT, MBR3050PT, MBR3060PT www.vishay.com Vishay General Semiconductor Revision: 27-May-2020 2 Document Number: 88676 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MBR3035PT MBR3045PT MBR3050PT MBR3060PT UNIT Maximum instantaneous forward voltage per diode VF (1) IF = 20 A TC = 25 °C - 0.75 V IF = 20 A TC = 125 °C 0.60 0.65 IF = 30 A TC = 25 °C 0.76 - IF = 30 A TC = 125 °C 0.72 - Maximum instantaneous reverse current at rated DC blocking voltage per diode IR (1) TJ = 25 °C 1.0 5.0 mA TJ = 125 °C 60 100 THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR3035PT MBR3045PT MBR3050PT MBR3060PT UNIT Typical thermal resistance, junction to case per diode RJC 1.4 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-247AD MBR3045PT-E3/45 6.13 45 30/tube Tube 0 6 12 24 30 0 50 100 150 18 MBR3035PT, MBR3045PT MBR3050PT, MBR3060PT Resistive or Inductive Load Case Temperature (°C) 0 50 150 100 250 200 300 1 100 10 Number of Cycles at 60 Hz T J = TJ Max. 8.3 ms Single Half Sine-Wave |
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