AM2313 datasheet(3/7 Pages) AITSEMI

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AiT Semiconductor Inc.

www.ait-ic.com

AM2313

MOSFET

P-CHANNEL ENHANCEMENT MODE

REV1.0

- MAR 2016 RELEASED -

- 3 -

ABSOLUTE MAXIMUM RATINGS

TA=25°C, unless otherwise noted

VDS, Drain-Source Voltage

-18V

VGS, Gate-Source Voltage

±10V

ID, Drain Current-Continuous

-3A

Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and

operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not

implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

ELECTRICAL CHARACTERISTICS

TA=25°C, unless otherwise noted

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Off Characteristics

Drain to Source Breakdown Voltage

BVDSS

VGS=0V, ID=-250μA

-18

Zero-Gate Voltage Drain Current

IDSS

VDS=-20V, VGS=0V

-1

μA

Gate Body Leakage Current, Forward

IGSSF

VGS=10V, VDS=0V

100

Gate Body Leakage Current, Reverse

IGSSR

VGS=-10V, VDS=0V

-100

On Characteristics

Gate Threshold Voltage

VGS(th)

VGS=VDS, ID=-250μA

-0.4

-1.0

Static Drain-Source On-Resistance

RDS(ON)

VGS=-4.5V, ID=-3.0A

120

mΩ

VGS=-2.5V, ID=-2.0A

150

mΩ

Drain-Source Diode Characteristics and Maximum Ratings

Drain-Source Diode Forward Voltage

VSD

VGS=0V, IS=-1.25A

-1.2

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