SIS4604DN datasheet(4/7 Pages) VISHAY

4 / 7 page

SiS4604DN

www.vishay.com

Vishay Siliconix

S22-0033-Rev. A, 17-Jan-2022

Document Number: 62028

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

Threshold Voltage

Single Pulse Power, Junction-to-Ambient

Safe Operating Area, Junction-to-Ambient

Note

a. VGS > minimum VGS at which RDS(on) is specified

100

1000

10000

0.01

0.1

100

0.2

0.4

0.6

0.8

1.0

1.2

Axis Title

SD - Source-to-Drain Voltage (V)

J = 150 °C

J = 25 °C

100

1000

10000

0.01

0.02

0.03

0.04

0.05

02468

Axis Title

GS - Gate-to-Source Voltage (V)

J = 125 °C

J = 25 °C

D = 10 A

100

1000

10000

-1.0

-0.7

-0.4

-0.1

0.2

0.5

-50

-25

100

125

150

Axis Title

J - Junction Temperature (°C)

D = 5 mA

D = 250 μA

100

1000

10000

100

200

300

400

500

0.0001

0.001

0.01

0.1

Axis Title

t - Time (s)

100

1000

10000

0.01

0.1

100

1000

0.01

0.1

100

Axis Title

DS - Drain-to-Source Voltage (V)

DM limited

A = 25 °C,

single pulse

Limited by R

DS(on)

BVDSS limited

10 ms

100 ms

1 ms

100 μs

D limited

10s

SIS4604DN Datasheet(PDF) 4 Page - Vishay Siliconix

SIS4604DN Datasheet(HTML) 4 Page - Vishay Siliconix

Html Pages

1 2 3 4 5 6 7

Datasheet Download

Link URL