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TF80N80 Datasheet(PDF) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co |
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TF80N80 Datasheet(HTML) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co |
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1 / 7 page ![]() POWER MOSFET Features 80V,80A N-Channel MOSFET R DS(on)(typ.)=6.5mΩ@VGS=10V High ruggedness Fast switching 100% avalanche tested Exceptional dv/dt capability Applications Switching application Absolute Maximum Ratings Symbol Parameter Value Units VDSS Drain-Source Voltage 80 V VGS Gate-Source Voltage +30 V ID Continuous Drain Current(TC=25℃) 80 A IDM Pulsed Drain Current(Note 1 ) 320 A EAS Single Pulsed Avalanche Energy(Note 2) 260 mJ PD Maximum Power Dissipation ( TC=25 ℃ ) 230 W Maximum Power Dissipation ( TC=100℃ ) 62.5 W TJ Operating Junction Temperature Range -55 to +175 ℃ TSTG Storage Temperature Range -55 to +175 ℃ Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2.Starting TJ=25℃,L=1.0mH,RG=50Ω,ID=37A,VGS=10V G D S TO-220H G D S TO-263 G D S TO-220 www.sztuofeng.com ,2018 V1.0 1 Mar N -CHANNEL ENHANCEMENT MODE POWER MOSFET SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD TF80N80 |
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