Electronic Components Datasheet Search
  English  ▼

X  

Preview PDF HTML

TF80N80 Datasheet(PDF) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

Part # TF80N80
Description  N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
Direct Link  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

TF80N80 Datasheet(HTML) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

  TF80N80 Datasheet HTML 1Page - Shenzhen Tuofeng Semiconductor Technology Co TF80N80 Datasheet HTML 2Page - Shenzhen Tuofeng Semiconductor Technology Co TF80N80 Datasheet HTML 3Page - Shenzhen Tuofeng Semiconductor Technology Co TF80N80 Datasheet HTML 4Page - Shenzhen Tuofeng Semiconductor Technology Co TF80N80 Datasheet HTML 5Page - Shenzhen Tuofeng Semiconductor Technology Co TF80N80 Datasheet HTML 6Page - Shenzhen Tuofeng Semiconductor Technology Co TF80N80 Datasheet HTML 7Page - Shenzhen Tuofeng Semiconductor Technology Co  
Zoom Inzoom in Zoom Outzoom out
 2 / 7 page
background image
Thermal data
Symbol
Parameter
Max.
Units
Rth J-C
Thermal Resistance, Junction to case
0.65
℃ / W
Electrical Characteristics (T
C=25℃ unless otherwise noted)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
DSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
80
V
I
DSSS
Drain-Source Leakage Current
VDS=80V, VGS=0V
250
uA
I
GSS
Gate Leakage Current, Forward
VGS=25V, VDS=0V
100
nA
Gate Leakage Current, Reverse
VGS= -25V, VDS=0V
-100
nA
V
GS(th)
Gate Threshold Voltage
VGS=VDS, ID=250uA
2
3
4
V
RDS(on)
Collector-Emitter Saturation Voltage
VGS=10V, ID=40A
6.5
8
m
Ω
gfs
Forward Transconductance
VDS=15V, ID=30A
28
S
Q
g
Total Gate Charge
VDD=60V
VGS=10V
ID=80A
107
nC
Qgs
Gate-Source Charge
26
nC
Qgd
Gate-Drain Charge
46
nC
t d(on)
Turn-on Delay Time
VDD=35V
VGS=10V
ID=45A
RG=4.7
-
25
-
ns
t r
Turn-on Rise Time
-
66
-
ns
t d(off)
Turn-off Delay Time
-
36
-
ns
t f
Turn-off Fall Time
-
24
-
ns
Ciss
Input Capacitance
VDS=30V
VGS=0V
f = 1MHz
-
3650
-
pF
Coss
Output Capacitance
-
980
-
pF
Crss
Reverse Transfer Capacitance
-
265
-
pF
RGint
Integrated gate resistor
1.6
Ω
Source-Drain Ratings and Characteristics (T
C=25℃ unless otherwise noted)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
SD
Forward On Voltage
VGS=0V,I
S=20A
-
1.2
V
IS
Continuous Diode Forward Current
80
A
t r r
Reverse Recovery Time
VDD=25V,IS=40A
dIF/dt=100A/us
-
45
ns
Qr r
Reverse Recovery Charge
-
90
nC
www.sztuofeng.com
,2018 V1.0
2
Mar
N -CHANNEL ENHANCEMENT MODE POWER MOSFET
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
TF80N80



Html Pages

1 2 3 4 5 6 7


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com