TF80P03 datasheet(1/6 Pages) TUOFENG

Part #	TF80P03

Description	P -CHANNEL ENHANCEMENT MODE POWER MOSFET

PDF	6 Pages

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Manufacturer	TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]

Direct Link	http://www.sztuofeng.com/?lang=en

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TF80P03

Shenzhen Tuofeng Semiconductor Technology Co., Ltd

P -CHANNEL ENHANCEMENT MODE POWER MOSFET

1

www.sztuofeng.com

Jul 2021 V1.0

●Ordering Information:

●Absolute Maximum Ratings

（T

C =25

℃

）

● General Description

The TF80P03 combines advanced trench MOSFET

technology with a low resistance package to provide

extremely low RDSON .This device is ideal for load switch

and battery protection applications.

● Features

Advance high cell density Trench technology

Low RDS(ON) to minimize conductive loss

Low Gate Charge for fast switching

Low Thermal resistance

●Application

MB/VGA Vcore

SMPS 2nd Synchronous Rectifier

POL application

BLDC Motor driver

● Product Summary

VDS =-30V

RDSON(-10V typ)

RDSON(-4.5V typ)

ID=-80A

=5.3mΩ

=6.8mΩ

Part NO.

TF80P03

Marking 1

MOQ

TO-251:50/PCS TO-252:2500/PCS

D

G

S

80N03

Marking 2

TF:tuofeng; Y:year code; XX:Week; AA:device code;

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

VDS

-30

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

ID@TC=25

℃

-80

A

ID@TC=75

℃

-60

A

ID @TC=100

℃

-48

A

Pulsed Drain Current ①

IDM

-160

A

Total Power Dissipation

PD@TC=25

℃

50

W

Total Power Dissipation

PD@TA=25

℃

2.0

W

Operating Junction Temperature

T J

-55 to 150

℃

Storage Temperature

TSTG

-55 to 150

℃

Note:

① Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% ;

TO-252

D

G

S

TO-251

G

D

S

80P03

TFYXXAA

80P03

TFYXXAA

D

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