TF80P03 datasheet(2/6 Pages) TUOFENG

2 / 6 page

Shenzhen Tuofeng Semiconductor Technology Co., Ltd

P -CHANNEL ENHANCEMENT MODE POWER MOSFET

www.sztuofeng.com

Jul 2021 V1.0

Single Pulse Avalanche Energy

EAS

230

Avalanche Current

IAS IAR

-20

●Thermal resistance

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal resistance, junction - case

RthJC

2.0

°C/W

Thermal resistance, junction - ambient

RthJA

°C/W

Soldering temperature, wave soldering for

Tsold

265

°C

●Electronic Characteristics

Parameter

Symbol

Condition

Min.

Typ

Max.

Unit

Drain-Source Breakdown

Voltage

BVDSS

VGS =0V,ID =250uA

-30

Gate Threshold Voltage

VGS(TH)

VGS =V DS, ID =250uA

-1.0

-2.1

Drain-Source Leakage Current

IDSS

VDS=-30V, VGS =0V

-1.0

Gate- Source Leakage Current

IGSS

VGS=±20V ,VDS =0V

±100

Static Drain-source On

Resistance

RDS(ON)

VGS=-10V, ID=-30A

5.3

6.5

mΩ

VGS=-4.5V, ID=-20A

6.8

7.5

mΩ

Forward Transconductance

gFS

VDS =-15V, ID=-30A

Source-drain voltage

VSD

Is=-20A

1.20

●Electronic Characteristics

Parameter

Symbol

Condition

Min.

Typ

Max.

Unit

Input capacitance

Ciss

Vds=-15V,Vgs=0V

f = 1MHz

4664

Output capacitance

Coss

616.8

Reverse transfer capacitance

Crss

603.2

⚫Gate Charge characteristics(Ta = 25

℃)

Parameter

Symbol

Condition

Min.

Typ

Max.

Unit

Gate Risistance

f = 1MHz

1.5

Total gate charge

VDD = - 15V

ID = -20A

VGS = -10V

Gate - Source charge

Qgs

9.5

Gate - Drain charge

Qgd

20.9

Turn-ON Delay time

tD(on)

VGS=-10V ,VDS=-10V

RG =6.0Ω, I=-20A

Turn-ON Rise time

Turn-Off Delay time

tD(off)

130

Turn-Off Fall time

-1.5

TF80P03

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