DS0147 datasheet(10/128 Pages) MICROCHIP

10 / 128 page

Unit

Max

Min

Symbol

Parameter

°C

150

–65

TSTG

Storage temperature

(ambient)

°C

135

–55

Junction temperature

°C

260

TSOLROHS

Maximum soldering

temperature RoHS

1. See FPGA Programming Cycles vs Retention Characteristics for retention time vs temperature. The total

time used in calculating the device retention includes the device operating temperature time and

temperature during storage time.

2. The power supplies for a given I/O bank x are shown as VDDIx and VDDAUXx.

5.2

Recommended Operating Conditions

The following table lists the recommended operating conditions.

Table 5 • Recommended Operating Conditions

Condition

Unit

Max

Typ

Min

Symbol

Parameter

1.03

1.00

0.97

VDD

Device core sup-

ply at 1.0 V

mode

1, 6

1.08

1.05

1.02

VDD

Device core sup-

ply at 1.05 V

mode

1, 6

When all lane

rates are 10.312

5 Gbps or less.

1.03

1.00

0.97

VDDA

Transceiver TX

and RX lanes

supply (1.0 V

mode)

6, 7

Must when any

lane rate is

1.08

1.05

1.02

VDDA

Transceiver TX

and RX lanes

greater than 10.

supply (1.05 V

mode)

3125 Gbps. L-

ane rates 10.31

25 Gbps or less

may also be

powered in 1.05

V mode.

1.89

1.80

1.71

VDD18

Programming

and HSIO receiv-

er supply

2.575

2.50

2.425

VDD25

Device core and

device PLL high-

voltage supply

2.575

2.50

2.425

VDDA25

Transceiver PLL

high-voltage

supply

Microsemi Proprietary and Confidential. DS0147 Revision 1.0

DC Characteristics

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