AM1012 datasheet(3/9 Pages) AITSEMI

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AiT Semiconductor Inc.

www.ait-ic.com

AM1012

MOSFET

N-CHANNEL 1.8-V (G-S) MOSFET

REV1.0

- SEP 2015 RELEASED -

- 3 -

ABSOLUTE MAXIMUM RATINGS

TA = 25℃, unless Otherwise Noted

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

±6

Continuous Drain Current (TJ = 150°C)NOTE2

TA=25°C

600

500

TA=85°C

400

350

Pulsed Drain Current NOTE1

IDM

1000

Continuous Source Current (diode conduction)NOTE2

275

250

Maximum Power DissipationNOTE2 for SC-75

TA=25°C

175

150

TA=85°C

Maximum Power DissipationNOTE2 for SC-89

TA=25°C

272

250

TA=85°C

160

140

Operating Junction and Storage Temperature Range

TJ, TSTG

-55 to150

℃

Gate-Source ESD Rating (HBM, Method 3015)

ESD

2000

Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and

operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not

implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

NOTE1: Pulse width limited by maximum junction temperature.

NOTE2: Surface Mounted on FR4 Board.

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