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STPS40A45CHR Datasheet(PDF) 2 Page - STMicroelectronics |
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STPS40A45CHR Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 11 page ![]() 1 Characteristics 1.1 Absolute maximum ratings The absolute maximum ratings are limiting values at 25°C, per diode unless otherwise notified. Values provided in Table 1 shall not be exceeded at any time during use or storage. Table 1. Absolute maximum ratings Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 45 V IO(1)(2) Average output rectified current per diode per package 20 40 A IFSM(3) Forward surge current 200 A dV/dt(4) Reverse voltage maximum rise rate 10 kV/µs Top Operating temperature range (case temperature) -65 to +175 °C Tj(5) Maximum junction temperature +175 °C Tstg Storage temperature range -65 to +175 °C Tsol(6) Soldering temperature +245 °C ESD Electrostatic discharge - Human Body Model 8 kV 1. Per diode: at Tcase > 109.4°C, derate linearly to 0 A at 175 °C; per device, at Tcase > 134.8 °C, derate linearly to 0 A at 175 °C. 2. Each diode of the pair can be used up to 40 A provided the total current complies with the 40 A absolute maximum rating of the TO-254AA. 3. Sinusoidal pulse of 10ms duration. 4. Guaranteed by design, characterization and test at 25°C of 10 parts per wafer lot. 5. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. 6. Duration 5 seconds maximum with at least 3 minutes between consecutive temperature peaks. 1.2 Thermal parameters Table 2. Thermal parameters Symbol Parameter Typ. value Max. value Unit Rth(j-c) (1) Thermal resistance, junction to case Per diode - 2.0 °C/W Per package - 1.5 1. When only 1 diode is used, the dissipation is made from a part of the die, hence to a higher thermal resistance. STPS40A45CHR Characteristics DS13193 - Rev 1 page 2/11 |
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