E2

2

1

3

Pin connection

Pin

Connection

1

Drain

2

Source (bottom side)

3

Gate

Features

Order code

Frequency

VDD

POUT

Gain

Efficiency

RF2L42008CG2

3600 MHz

28 V

8 W

14.5 dB

47%

•

High efficiency and linear gain operations

•

Integrated ESD protection

•

Internally matched for ease of use

•

Large positive and negative gate-source voltage range for improved class C

operation

•

Excellent thermal stability, low HCI drift

•

In compliance with the European directive 2002/95/EC

Applications

•

Telecom and wideband communications

•

Avionics and radar

•

2.45 GHz industrial

Description

The RF2L42008CG2 is a 8 W, 28 V, internally matched LDMOS FET, designed for

global positioning system, wideband communications and ISM applications in the

frequency range from 0.7 to 4.2 GHz. It can be used in class AB, B or C for all typical

modulation formats.

Product status link

RF2L42008CG2

Product summary

Order code

RF2L42008CG2

Marking

2L42008

Package

E2

Packing

Tape and reel 13"

Base/bulk quantity

300/300

8 W, 28 V, 0.7 to 4.2 GHz RF power LDMOS transistor

RF2L42008CG2

Datasheet

DS13240 - Rev 3 - September 2021

For further information contact your local STMicroelectronics sales office.

www.st.com