1

Characteristics

Table 1. Absolute ratings (limiting values, per diode, at 25 °C unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

Tj = -40 to +175 °C

100

V

IF(RMS)

Forward rms current

80

A

IF(AV)

Average forward current, δ = 0.5 square wave

Per diode, Tc = 160 °C

30

A

Per device, Tc = 160 °C

60

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

450

A

PARM

Repetitive peak avalanche power

tp = 10 µs, Tj = 125 °C

1900

W

Tstg

Storage temperature range

-65 to +175

°C

Tj

Operating junction temperature range(1)

-40 to +175

°C

1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 2. Thermal resistance parameters

Symbol

Parameter

Typ. value

Unit

Rth(j-c)

Junction to case

Per diode

0.38

°C/W

Per device

0.19

Table 3. Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

3

16

µA

Tj = 125 °C

-

4

16

mA

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 30 A

-

0.76

0.81

V

Tj = 125 °C

-

0.63

0.7

Tj = 25 °C

IF = 60 A

-

0.87

0.93

Tj = 125 °C

-

0.75

0.83

1. tp = 5 ms, δ < 2%

2. tp = 380 μs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 0.57 x IF(AV) + 0.0043 x IF2(RMS)

STPS61H100-Y

Characteristics

DS13064 - Rev 1

page 2/9